A (10x10) domain wall structure induced by Mn adsorption on the pseudo-(1x1) surface of GaN(0001)

被引：6
作者：
Cui, Y
Li, L
机构：
[1] Univ Wisconsin, Dept Phys, Milwaukee, WI 53211 USA
[2] Univ Wisconsin, Surface Studies Lab, Milwaukee, WI 53211 USA
来源：
SURFACE SCIENCE | 2003年 / 522卷 / 1-3期
基金：
美国国家科学基金会;
关键词：
scanning tunneling microscopy; reflection high-energy electron diffraction; (RHEED); gallium nitride; manganese; surface relaxation and reconstruction;
D O I：
10.1016/S0039-6028(02)02400-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A domain wall superstructure is observed when 1/3 monolayer of manganese is deposited on the pseudo-(1 x 1) surface of GaN(0001) at 500 degreesC. At the atomic scale, the domains have hexagonal symmetry with a (10 x 10) periodicity on average. Within the domain, a (root3 x root3) reconstruction is formed. A model is proposed to explain the formation of the domain walls and the (root3 x root3) structure. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L21 / L26
页数：6
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