Study on the nitridation of β-Ga2O3 films

被引：1

作者：

Cheng, Fei ^{[1
]}

Li, Yue-Wen ^{[1
]}

Zhao, Hong ^{[1
]}

Xiu, Xiang-Qian ^{[1
,2
]}

Jia, Zhi-Tai ^{[2
]}

Liu, Duo ^{[2
]}

Hua, Xue-Mei ^{[1
]}

Xie, Zi-Li ^{[1
]}

Tao, Tao ^{[1
]}

Chen, Peng ^{[1
]}

Liu, Bin ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, You-Dou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China

来源：

CHINESE PHYSICS B | 2019年 / 28卷 / 08期

关键词：

beta-Ga2O3; nitridation; GaN; single-crystal; RAMAN-SCATTERING; HEXAGONAL GAN; DISPERSION; GROWTH; XRD;

D O I：

10.1088/1674-1056/28/8/088103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Single-crystal GaN layers have been obtained by nitriding beta-Ga2O3 films in NH3 atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN.

引用

页数：5

共 24 条

[1] Controlled Synthesis of GaN@SiO2 Particles in Preventing the Hydrolysis of GaN [J].

Bao, Keyan ;

Guo, Ge ;

Zhang, Lianfeng ;

Liu, Ruoyu ;

Sun, Hongxian ;

Zhong, Zhiguo .

JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (27) :13200-13206

[2] Phonon dispersion and Raman scattering in hexagonal GaN and AlN [J].

Davydov, VY ;

Kitaev, YE ;

Goncharuk, IN ;

Smirnov, AN ;

Graul, J ;

Semchinova, O ;

Uffmann, D ;

Smirnov, MB ;

Mirgorodsky, AP ;

Evarestov, RA .

PHYSICAL REVIEW B, 1998, 58 (19) :12899-12907

[3] Efficient and stable laser-driven white lighting [J].

Denault, Kristin A. ;

Cantore, Michael ;

Nakamura, Shuji ;

DenBaars, Steven P. ;

Seshadri, Ram .

AIP ADVANCES, 2013, 3 (07)

[4] XRD and optical characterisation of GaN and associated substrate materials [J].

Fantner, EB ;

Ryan, T ;

Schurman, M ;

Ferguson, I .

EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2, 2000, 321-3 :1056-1061

[5] Raman frequencies and angular dispersion of polar modes in aluminum nitride and gallium nitride [J].

Filippidis, L ;

Siegle, H ;

Hoffmann, A ;

Thomsen, C ;

Karch, K ;

Bechstedt, F .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (02) :621-627

[6] XRD, XPS, SEM, PL and Raman scattering analysis of synthesised GaN powder [J].

Kumar, MS ;

Kumar, J .

MATERIALS CHEMISTRY AND PHYSICS, 2003, 77 (02) :341-345

[7] Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires [J].

Kumar, Mukesh ;

Sarau, George ;

Heilmann, Martin ;

Christiansen, Silke ;

Kumar, Vikram ;

Singh, R. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (03)

[8] Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga2O3 [J].

Li, Yuewen ;

Xiu, Xiangqian ;

Jia, Zhitai ;

Liu, Duo ;

Hua, Xuemei ;

Xie, Zili ;

Tao, Tao ;

Chen, Peng ;

Liu, Bin ;

Tao, Xutang ;

Zhang, Rong ;

Zheng, Youdou .

SUPERLATTICES AND MICROSTRUCTURES, 2019, 126 :98-102

[9] Manganese-activated gallium oxide electroluminescent phosphor thin films prepared using various deposition methods [J].

Miyata, T ;

Nakatani, T ;

Minami, T .

THIN SOLID FILMS, 2000, 373 (1-2) :145-149

[10] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571

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