First demonstration of InGaP/InAlGaP based 608nm orange laser and 583nm yellow superluminescent diode

被引：0

作者：

Majid, M. A. ^{[1
]}

Al-Jabr, A. A. ^{[1
]}

Oubei, H. M. ^{[1
]}

Alias, M. S. ^{[1
]}

Ng, T. K. ^{[1
]}

Anjum, D. H. ^{[2
]}

Ooi, B. S. ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Photon Lab, Thuwal 239556900, Saudi Arabia

[2] KAUST, Adv Nanofabricat Imaging & Characterizat Core Fac, Thuwal 239556900, Saudi Arabia

来源：

2015 PHOTONICS CONFERENCE (IPC) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the first demonstration of InGaP/InAlGaP based orange semiconductor laser (OSL) and yellow superluminescent diode (YSLD) emitting at a wavelength of 608nm and 583nm respectively. The total output power of YSLD is similar to 4.5mW which is the highest ever reported power on this material system at room-temperature.

引用

页数：2