A formation mechanism of carbon nanotube films on SiC(0001)

被引：176
作者：
Kusunoki, M [1 ]
Suzuki, T
Hirayama, T
Shibata, N
Kaneko, K
机构：
[1] FCT Cent Res Dept, Japan Fine Ceram Ctr, Nagoya, Aichi 4568587, Japan
[2] Univ Tokyo, Engn Res Inst, Tokyo 113, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期
关键词：
D O I：
10.1063/1.127034
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report a remarkable difference of decomposed structures on the Si(0001) and C(000 (1) over bar) faces of a SiC single crystal observed by using a cross-sectional high-resolution electron microscopy. An aligned carbon nanotube (CNT) film was fabricated on the C face perpendicular to the surface after heating at 1700 degrees C for half an hour in a vacuum. On the contrary, a very thin layer of graphite sheets parallel to the surface was formed on the Si face under the same condition. It is proposed that the growth of CNTs is determined by the generation of nanocaps at the initial stage, by comparing the difference of the decomposition mechanisms on the both faces. (C) 2000 American Institute of Physics. [S0003-6951(00)04330-8].
引用
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页码：531 / 533
页数：3
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