GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

被引：6
|
作者：
Abramkin, D. S. [1 ,2 ]
Petrushkov, M. O. [1 ]
Putyato, M. A. [1 ]
Semyagin, B. R. [1 ]
Emelyanov, E. A. [1 ]
Preobrazhenskii, V. V. [1 ]
Gutakovskii, A. K. [1 ,2 ]
Shamirzaev, T. S. [1 ,2 ,3 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Ural Fed Univ, Ekaterinburg 620002, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 09期
基金：
俄罗斯科学基金会;
关键词：
hybrid substrates; photoluminescence; GaP on Si; molecular-beam epitaxy; quantum wells; SILICON; SEMICONDUCTORS; GAP;
D O I：
10.1134/S1063782619090021
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.
引用
收藏
页码：1143 / 1147
页数：5
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