GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

被引：6

作者：

Abramkin, D. S. ^{[1
,2
]}

Petrushkov, M. O. ^{[1
]}

Putyato, M. A. ^{[1
]}

Semyagin, B. R. ^{[1
]}

Emelyanov, E. A. ^{[1
]}

Preobrazhenskii, V. V. ^{[1
]}

Gutakovskii, A. K. ^{[1
,2
]}

Shamirzaev, T. S. ^{[1
,2
,3
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Ural Fed Univ, Ekaterinburg 620002, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

hybrid substrates; photoluminescence; GaP on Si; molecular-beam epitaxy; quantum wells; SILICON; SEMICONDUCTORS; GAP;

D O I：

10.1134/S1063782619090021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

引用

页码：1143 / 1147

页数：5

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