GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

被引：6

作者：

Abramkin, D. S. ^{[1
,2
]}

Petrushkov, M. O. ^{[1
]}

Putyato, M. A. ^{[1
]}

Semyagin, B. R. ^{[1
]}

Emelyanov, E. A. ^{[1
]}

Preobrazhenskii, V. V. ^{[1
]}

Gutakovskii, A. K. ^{[1
,2
]}

Shamirzaev, T. S. ^{[1
,2
,3
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Ural Fed Univ, Ekaterinburg 620002, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

hybrid substrates; photoluminescence; GaP on Si; molecular-beam epitaxy; quantum wells; SILICON; SEMICONDUCTORS; GAP;

D O I：

10.1134/S1063782619090021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

引用

页码：1143 / 1147

页数：5

共 18 条

[1] Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates [J].

Abramkin, D. S. ;

Petrushkov, M. O. ;

Putyato, M. A. ;

Semyagin, B. R. ;

Shamirzaev, T. S. .

SEMICONDUCTORS, 2018, 52 (11) :1484-1490

[2] Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers [J].

Abramkin D.S. ;

Petrushkov M.O. ;

Emel’yanov E.A. ;

Putyato M.A. ;

Semyagin B.R. ;

Vasev A.V. ;

Esin M.Y. ;

Loshkarev I.D. ;

Gutakovskii A.K. ;

Preobrazhenskii V.V. ;

Shamirzaev T.S. .

Optoelectronics, Instrumentation and Data Processing, 2018, 54 (02) :181-186

[3] Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type [J].

Abramkin, D. S. ;

Gutakovskii, A. K. ;

Shamirzaev, T. S. .

JOURNAL OF APPLIED PHYSICS, 2018, 123 (11)

[4] Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures [J].

Abramkin, D. S. ;

Putyato, M. A. ;

Budennyy, S. A. ;

Gutakovskii, A. K. ;

Semyagin, B. R. ;

Preobrazhenskii, V. V. ;

Kolomys, O. F. ;

Strelchuk, V. V. ;

Shamirzaev, T. S. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)

[5] SILICON PHOTONICS Energy-efficient communication [J].

Asghari, Mehdi ;

Krishnamoorthy, Ashok V. .

NATURE PHOTONICS, 2011, 5 (05) :268-270

[6] GaAs epitaxy on Si substrates: modern status of research and engineering [J].

Bolkhovityanov, Yu B. ;

Pchelyakov, O. P. .

PHYSICS-USPEKHI, 2008, 51 (05) :437-456

[7] Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy [J].

Castrillo, P ;

Armelles, G ;

Silveira, JP ;

Briones, F ;

Barbolla, J .

APPLIED PHYSICS LETTERS, 1997, 71 (10) :1353-1355

[8] Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy [J].

Grassman, T. J. ;

Brenner, M. R. ;

Rajagopalan, S. ;

Unocic, R. ;

Dehoff, R. ;

Mills, M. ;

Fraser, H. ;

Ringel, S. A. .

APPLIED PHYSICS LETTERS, 2009, 94 (23)

[9]

Gross E.F., 1963, SOV PHYS DOKL, V8, P896

[10] PRECISE DETERMINATION OF LATTICE-PARAMETER AND THERMAL-EXPANSION COEFFICIENT OF SILICON BETWEEN 300-K AND 1500-K [J].

OKADA, Y ;

TOKUMARU, Y .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :314-320

← 1 2 →