Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors

被引：109

作者：

Wong, M ^{[1
]}

Jin, ZH

Bhat, GA

Wong, PC

Kwok, HS

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Univ Sci & Technol, Mat Preparat & Characterizat Facil, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 05期

关键词：

grain boundary; MILC; nickel; thin-film transistor;

D O I：

10.1109/16.841241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Process and material characterization of the crystallization of amorphous silicon by metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) using evaporated Ni has been performed. An activation energy of about 2 eV has been obtained for the MILC rate. The Ni content in the MILC area is about 0.02 atomic %, significantly higher than the solid solubility Limit of Ni in crystalline Si at the crystallization temperature of 500 degrees C. A prominent Ni peak has been detected at the MILC front using scanning secondary ion mass spectrometry. The MIC/MILC interface has been determined to be highly defective, comprising a continuous grain boundary with high Ni concentration. The effects of the relative locations of this interface and the metallurgical junctions on TFT performance have been studied.

引用

页码：1061 / 1067

页数：7

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