Properties of excitonic photoluminescence from ZnCdSe/ZnSe quantum well structures

被引：0

作者：

Wang, XJ ^{[1
]}

Huang, DM ^{[1
]}

Wei, YF ^{[1
]}

Sheng, CX ^{[1
]}

Yu, GC ^{[1
]}

机构：

[1] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

OPTICAL MATERIALS | 2000年 / 14卷 / 03期

基金：

中国国家自然科学基金;

关键词：

ZnCdSe/ZnSe; photoluminescence; exciton;

D O I：

10.1016/S0925-3467(99)00136-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoluminescence spectra from ZnCdSe/ZnSe quantum well structures are investigated. Both free exciton and associated low-energy peaks are observed under the continuous wave excitation. Experimental results indicate that the low-energy peaks are due to the charged excitons. The binding energies are measured to be 4.0, 7.0, 10, and 12 meV for the Zn0.8Cd0.2Se quantum wells of width 10,0, 5.0, 3.8, and 2.5 nm, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：197 / 200

页数：4

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