Absence of Wigner crystallization in graphene

被引：50

作者：

Dahal, Hari P. ^{[1
]}

Joglekar, Yogesh N.

Bedell, Kevin S.

Balatsky, Alexander V.

机构：

[1] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

[2] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[3] Indiana Univ Purdue Univ, Dept Phys, Indianapolis, IN 46202 USA

[4] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[5] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 23期

关键词：

BERRYS PHASE;

D O I：

10.1103/PhysRevB.74.233405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene, a single sheet of graphite, has attracted tremendous attention due to recent experiments which demonstrate that carriers in it are described by massless fermions with linear dispersion. In this Brief Report, we consider the possibility of Wigner crystallization in graphene in the absence of an external magnetic field. We show that the ratio of potential and kinetic energy is independent of the carrier density, the tuning parameter that usually drives Wigner crystallization, and find that for given material parameters (dielectric constant and Fermi velocity), Wigner crystallization is not possible. We comment on how these results change in the presence of a strong external magnetic field.

引用

页数：3

共 23 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].