SWIR HgCdTe 256x256 Focal Plane Array technology at BAE systems

被引：0

作者：

Hairston, A. ^{[1
]}

Tobin, S. P. ^{[1
]}

Hutchins, A. ^{[1
]}

Marciniec, J. ^{[1
]}

Mullarkey, J. ^{[1
]}

Norton, P. ^{[1
]}

Gurnee, M. ^{[1
]}

Reine, M. B. ^{[1
]}

机构：

[1] BAE Syst, 2 Forbes Rd, Lexington, MA 02421 USA

来源：

INFRARED DETECTORS AND FOCAL PLANE ARRAYS VIII | 2006年 / 6295卷

关键词：

HgCdTe; photodiode; SWIR; Focal Plane Array; FPA;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper reports new performance data for SWIR HgCdTe 256x256 hybrid Focal Plane Arrays with cutoff wavelenaths of 2.6-2.7 mu m, operating at temperatures of 190 K to 220 K. The unit cell C, size is 30x30 mu m2. Back-illuminated SWIR HgCdTe P-on-n photodiode arrays were fabricated from two-layer LPE films grown on CdZnTe substrates. Response uniformity is excellent, with (sigma/mu=34%, and response operabilities are better than 99.9%. At a temperature of 190 K and a background photon flux of 6.8x10(11) ph/cm(2)-s, the median NEI is 1.1x10(9) ph/cm(2)-S, which is 1.4 times the BLIP NEI. NEI operabilities are better than 98.8%. Quantum efficiencies for large-area test diodes are 69% to 78%, close to the 79% upper limit imposed by reflection from the non-antireflection-coated CdZnTe substrate.

引用

页数：11

共 7 条

[1] Advances in liquid phase epitaxial growth of Hg1-XCdXTe for SWIR through VLWIR photodiodes [J].