Anodic oxidation kinetics of nitrogen-implanted silicon

被引：0
|
作者：
Safarov, AS
Egamberdiev, BE
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来源：
INORGANIC MATERIALS | 1997年 / 33卷 / 05期
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T [工业技术];
学科分类号：
08 ;
摘要：
The dependences of anodic oxidation rate on the distance from the surface of Si samples implanted with nitrogen to high doses were studied. The anodic oxidation rate depends on the concentration of point defects produced by the exothermic reaction of oxygen with the Si surface.
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页码：472 / 474
页数：3
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