GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer

被引：26

作者：

Kamarudin, M. Ahmad ^{[1
]}

Hayne, M. ^{[1
]}

Zhuang, Q. D. ^{[1
]}

Kolosov, O. ^{[1
]}

Nuytten, T. ^{[2
]}

Moshchalkov, V. V. ^{[2
]}

Dinelli, F. ^{[3
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Katholieke Univ Leuven, INPAC Inst Nanoscale Phys & Chem, Pulsed Fields Grp, B-3001 Louvain, Belgium

[3] CNR Ist Studio Mat Nanostrutturati, I-40129 Bologna, Italy

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

ANTIMONY EXCHANGE; ISLANDS; SURFACE;

D O I：

10.1088/0022-3727/43/6/065402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the characteristics of GaSb quantum dots (QDs) grown by molecular beam epitaxy on GaAs at temperatures from 400 to 490 degrees C. The dot morphology, in terms of size, shape and density, as determined by atomic force microscopy (AFM) on uncapped QDs, was found to be highly sensitive to the growth temperature. Photoluminescence (PL) spectra of capped QDs are also strongly dependent on growth temperature, but for samples with the highest dot density, where the QD luminescence would be expected to be the most intense, it is absent. We attribute this to dissolution of the dots by the capping layer. This explanation is confirmed by AFM of a sample that is thinly capped at 490 degrees C. Deposition of the capping layer at low temperature resolves this problem, resulting in strong QD PL from a sample with a high dot density.

引用

页数：5

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