Kinetic model for degradation of light-emitting diodes

被引：99

作者：

Chuang, SL ^{[1
]}

Ishibashi, A ^{[1
]}

Kijima, S ^{[1
]}

Nakayama, N ^{[1
]}

Ukita, M ^{[1
]}

Taniguchi, S ^{[1
]}

机构：

[1] SONY CORP,RES CTR,HODOGAYA KU,YOKOHAMA,KANAGAWA 240,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 06期

关键词：

light-emitting diodes; quantum-well devices; semiconductor lasers;

D O I：

10.1109/3.585485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a kinetic model for the optical output degradation of light-emitting diodes based on the carrier-recombination enhanced defect motion. Our model leads to analytical solutions and universal curves for the optical output power and the defect density as a function of the normalized aging time with the initial quantum efficiency as the determining parameter. The theoretical results explain very well the time dependence of the II-VI light-emitting diodes under constant current aging condition. The faster aging rate with increasing bias current or temperature is also investigated both experimentally and theoretically, resulting in a very good agreement. Our model provides a quantitative description of the light-emitting diode aging characteristics for compound semiconductors in the presence of electron-hole recombination-enhanced defect generation.

引用

页码：970 / 979

页数：10

共 43 条

[1] Shortest wavelength semiconductor laser diode
Akasaki, I
Sota, S
Sakai, H
Tanaka, T
Koike, M
Amano, H
[J]. ELECTRONICS LETTERS, 1996, 32 (12) : 1105 - 1106
[2] Universal curves for optical power degradation of II-VI light-emitting diodes
Chuang, SL
Ukita, M
Kijima, S
Taniguchi, S
Ishibashi, A
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (11) : 1588 - 1590
[3] CHUANG SL, 1996, C LAS EL TECH DIG SE, V9, P455
[4] CHUANG SL, 1995, PHYSICS OPTOELECTRON
[5] THERMAL-CHARACTERISTICS OF BLUE-GREEN II-VI SEMICONDUCTOR-LASERS
DRENTEN, RR
HABERERN, KW
GAINES, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 3988 - 3993
[6] Fukuda M., 1991, RELIABILITY DEGRADAT
[7] COMPENSATION OF P-TYPE DOPING IN ZNSE - THE ROLE OF IMPURITY-NATIVE DEFECT COMPLEXES
GARCIA, A
NORTHRUP, JE
[J]. PHYSICAL REVIEW LETTERS, 1995, 74 (07) : 1131 - 1134
[8] (100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS
GUHA, S
CHENG, H
HAASE, MA
DEPUYDT, JM
QIU, J
WU, BJ
HOFLER, GE
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (07) : 801 - 803
[9] DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS
GUHA, S
DEPUYDT, JM
HAASE, MA
QIU, J
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (23) : 3107 - 3109
[10] THE 1ST COMPACT BLUE-GREEN DIODE-LASERS - WIDE-BANDGAP-II-VI SEMICONDUCTORS COME OF AGE
GUNSHOR, RL
NURMIKKO, AV
[J]. PROCEEDINGS OF THE IEEE, 1994, 82 (10) : 1503 - 1513

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