Optimum structures for gamma-ray radiation resistant SiC-MOSFETs

被引：15

作者：

Mitomo, Satoshi ^{[1
,2
]}

Matsuda, Takuma ^{[1
,2
]}

Murata, Koichi ^{[1
,2
]}

Yokoseki, Takashi ^{[1
,2
]}

Makino, Takahiro ^{[2
]}

Takeyama, Akinori ^{[2
]}

Onoda, Shinobu ^{[2
]}

Ohshima, Takeshi ^{[2
]}

Okubo, Shuichi ^{[3
]}

Tanaka, Yuki ^{[3
]}

Kandori, Mikio ^{[3
]}

Yoshie, Toru ^{[3
]}

Hijikata, Yasuto ^{[1
]}

机构：

[1] Saitama Univ, Sakura Ku, Saitama 3388570, Japan

[2] Natl Inst Quantum & Radiol Sci & Technol QST, Takasaki, Gunma 3701292, Japan

[3] Sanken Elect Co Ltd, Saitama 3528666, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 04期

关键词：

device design; gamma radiation; MOSFET; radiation resistance; SiC; CHANNEL 6H-SIC MOSFETS; INTERFACE TRAPS; CHARGE; IRRADIATION; HARDNESS; DIODES;

D O I：

10.1002/pssa.201600425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to develop highly radiation-tolerant SiC MOSFETs, we investigated the dependence of the gamma-ray radiation response on the gate oxide thickness and nitridation processes, used for oxide growth oxide (60 nm) showed a rapid decrease in the threshold voltage shift Delta V-th of more than 400 kGy, and transitioned to the normally-on state at lower doses than those with a thin gate oxide (35 nm). The MOSFETs with gate oxides treated with lower concentrations of N2O (10%) demonstrated a higher radiation tolerance (Delta V-th, channel mobility, and subthreshold swing) than with a 100% N2O treatment. The MOSFETs with more p-well implantation steps (three steps) showed a smaller negative shift of the threshold voltage relative to those implanted with two steps. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：7

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