Effect of bottom electrodes on resistance degradation and breakdown of (Ba, Sr)TiO3 thin films

被引：12

作者：

Tsai, MS ^{[1
]}

Tseng, TY

机构：

[1] Mosel Vitel Co, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30050, Taiwan

来源：

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES | 2000年 / 23卷 / 01期

关键词：

bottom electrodes; BST thin films; degradation; dielectric film; dynamic random-access memories; sputtering;

D O I：

10.1109/6144.833051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of bottom electrodes (Pt, Ir, Ru) on the degradation of (Ba,Sr)TiO3 (BST) thin films under dc stress conditions was investigated. The current-time (I-t) end current-voltage (I-V) measurement results indicated that the BST thin films deposited on Ru have faster degradation than those deposited on Pt and Ir. The degradation was considered to be caused by the deterioration of Schottky-barrier. Under de stress conditions, the dielectric relaxation current in the BST dielectric films probably enhances the deterioration. The breakdown time was found to be approximated by an exponential function of an electric field [t(B) = alpha exp(-beta E)] for dc stress. The value of the exponential factor beta for BST deposited on Pt and Ir was about a quarter of that for BST deposited on Ru. The different value of beta observed under de stress indicates that the degradation of BST on Ru would be more serious than on Pt and Ir. The ten Sears lifetime of time-dependent dielectric breakdown (TDDB) studies indicate that BST on Pt, Ir and Ru have longer lifetime over ten years on operation at the voltage bias of 1 V.

引用

页码：128 / 135

页数：8

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