Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

被引：6

作者：

Vasileuski, Yury ^{[1
]}

Malyshev, Sergei ^{[1
]}

Chizh, Alexander ^{[1
]}

机构：

[1] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220090, BELARUS

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 14-15期

关键词：

Avalanche photodiode; Edge breakdown; 2D numerical simulation;

D O I：

10.1007/s11082-009-9324-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p(+)-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed.

引用

页码：1247 / 1253

页数：7

共 7 条

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