Electron transport in disordered graphene

被引:364
作者
Ostrovsky, P. M. [1 ]
Gornyi, I. V.
Mirlin, A. D.
机构
[1] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany
[2] RAS, LD Landau Theoret Phys Inst, Moscow 119334, Russia
[3] Univ Karlsruhe, Inst Theorie Kondensierten Mat, D-76128 Karlsruhe, Germany
[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[5] Petersburg Nucl Phys Inst, St Petersburg 188350, Russia
关键词
D O I
10.1103/PhysRevB.74.235443
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the concentration dependence of conductivity is linear in the case of strong scatterers, in line with recent experimental observations, and logarithmic for weak scatterers. At half filling the conductivity is of the order of e(2)/h if the randomness preserves one of the chiral symmetries of the clean Hamiltonian, whereas for generic disorder the conductivity is strongly affected by localization effects.
引用
收藏
页数:20
相关论文
共 104 条