Growth and Properties of Sb-doped ZnMgO Thin Films Deposited Using rf Magnetron Sputtering

被引：2

作者：

Chung, Sung Mook ^{[1
]}

Shin, Jae Heon ^{[1
]}

Ryu, Min Ki ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Chu, Hye Yong ^{[1
]}

Cho, Kyoung Ik ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 55卷 / 03期

关键词：

Sb-doped ZnMgO thin film; rf magnetron sputtering; Annealing conditions; Properties; COMBINATORIAL APPROACH; ELECTRICAL-PROPERTIES; ZNO; TRANSPARENT; TRANSISTORS; DEVICES; FABRICATION; MGXZN1-XO; PHOSPHOR;

D O I：

10.3938/jkps.55.1123

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the growth and the properties of Sb-doped ZnMgO thin films deposited using radio-frequency (rf) magnetron sputtering for applications as transparent thin film transistors (TFTs) with p-type channels. The target was prepared with high-purity MgO mixed with ZnO and Sb(2)O(5) as doping agents. Thin films were heat-treated in vacuum, oxygen, and nitrogen atmospheres. The effects of the working gas (Ar/O(2)) ratios and the annealing conditions on the structural and the electrical properties were investigated. The atomic ratio of Zn/Mg in the films, and accordingly the films properties, depended on the post-annealing conditions and on the oxygen partial pressure in the working gas during sputtering.

引用

页码：1123 / 1127

页数：5

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