Stability diagrams for single-electron transistors

被引：5

作者：

Wu, F ^{[1
]}

Wang, TH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

ACTA PHYSICA SINICA | 2002年 / 51卷 / 12期

关键词：

single-electron transistors; Coulomb blockade; tunneling;

D O I：

10.7498/aps.51.2829

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on an equivalent circuit for single-electron transistors, the electrostatic energy on the charges is deduced. The transistor can be either at Coulomb blockade or conducting under various gate voltages and bias voltages along the single-electron transistor. Its stability diagrams are given and discussed.

引用

页码：2829 / 2835

页数：7

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