Band-edge energies and photoelectrochemical properties of n-type AlxGa1-xN and InyGa1-yN alloys

被引：35
作者：
Fujii, Katsushi [1 ]
Ono, Masato [1 ]
Ito, Takashi [1 ]
Iwaki, Yasuhiro [1 ]
Hirako, Akira [1 ]
Ohkawa, Kazuhiro [1 ]
机构：
[1] Tokyo Univ Sci, Dept Appl Phys, Japan Sci & Technol Agcy, Nakamura Inhomogeneous Crystal Project, Tokyo, Tokyo 1628601, Japan
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2007年 / 154卷 / 02期
关键词：
D O I：
10.1149/1.2402104
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We studied photoelectrochemical properties of AlxGa1-xN for the first time, and compared with those of InyGa1-yN. The conduction band-edge energy of n-type AlxGa1-xN decreased with Al composition, however the valence band-edge energy did not significantly change. Saturated photocurrent obtained from dynamic photocurrent-voltage measurements under illumination also decreased with increasing Al composition. Greater Al composition also shifted the onset voltage to more negative direction. These phenomena can be explained by the changes of bandgap and band-edge energies with Al composition. (c) 2006 The Electrochemical Society.
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收藏
页码：B175 / B179
页数：5
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