High-Speed Stacked Tunneling PiN Electro-Optical Modulators

被引：0
|
作者：
Wu, Pengfei [1 ]
Shur, Michael [1 ,2 ]
Huang, Zhaoran Rena [1 ]
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, 110 8th St, Troy, NY 12180 USA
[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
来源：
2013 IEEE PHOTONICS CONFERENCE (IPC) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel design of a PiN electro-optical modulator is proposed. A PN junction tunneling structure is inserted into the intrinsic region of the PiN EO modulator. Theoretical study shows a speed improvement of two times.
引用
收藏
页码：42 / 43
页数：2
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