High-Speed Stacked Tunneling PiN Electro-Optical Modulators

被引：0

作者：

Wu, Pengfei ^{[1
]}

Shur, Michael ^{[1
,2
]}

Huang, Zhaoran Rena ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, 110 8th St, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

来源：

2013 IEEE PHOTONICS CONFERENCE (IPC) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel design of a PiN electro-optical modulator is proposed. A PN junction tunneling structure is inserted into the intrinsic region of the PiN EO modulator. Theoretical study shows a speed improvement of two times.

引用

页码：42 / 43

页数：2