Near-Surface [Ga]/([In] plus [Ga]) Composition in Cu(In,Ga)Se2 Thin-Film Solar Cell Absorbers: An Overlooked Material Feature

被引：5

作者：

Felix, Roberto ^{[1
]}

Witte, Wolfram ^{[2
]}

Hariskos, Dimitrios ^{[2
]}

Paetel, Stefan ^{[2
]}

Powalla, Michael ^{[2
]}

Lozac'h, Mickael ^{[3
]}

Ueda, Shigenori ^{[4
,5
]}

Sumiya, Masatomo ^{[3
]}

Yoshikawa, Hideki ^{[4
]}

Kobayashi, Keisuke ^{[6
]}

Yang, Wanli ^{[7
]}

Wilks, Regan G. ^{[1
,8
]}

Baer, Marcus ^{[1
,8
,9
,10
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Interface Design, D-14109 Berlin, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70563 Stuttgart, Germany

[3] NIMS, Tsukuba, Ibaraki 3050044, Japan

[4] NIMS, Synchrotron Xray Stn SPring 8, Sayo, Hyogo 6795148, Japan

[5] NIMS, Res Ctr Adv Measurement & Characterizat, Tsukuba, Ibaraki 3050047, Japan

[6] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Tokai, Hyogo 6795148, Japan

[7] Lawrence Berkeley Natl Lab, ALS, Berkeley, CA 94720 USA

[8] Helmholtz Zentrum Berlin Mat & Energie GmbH, Energy Mat Situ Lab Berlin EMIL, D-12489 Berlin, Germany

[9] Helmholtz Inst Erlangen Nurnberg Renewable Energy, D-12489 Berlin, Germany

[10] Friedrich Alexander Univ Erlangen Nurnberg, Dept Chem & Pharm, D-91058 Erlangen, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 18期

关键词：

chalcopyrites; photoemission spectroscopy; surface band gap; thin-film solar cells; PHOTOELECTRON ANGULAR-DISTRIBUTION; POSTDEPOSITION TREATMENT; CHALCOPYRITE; EFFICIENCIES; TRANSMISSION; PARAMETERS;

D O I：

10.1002/pssa.201800856

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The chemical and electronic structures in the near-surface region of Cu(In,Ga)Se-2 thin-film solar cell absorbers are investigated using nondestructive soft and hard X-ray photoelectron spectroscopy. In addition to a pronounced surface Cu-depletion, the [Ga]/([In]+[Ga]) composition indicates that the topmost surface is Ga-poor (or In-rich). For the studied depth region, common depth profiling techniques generally fail to provide reliable information and, thus, the near-surface chemical and electronic structure profiles are often overlooked. The relation between the observed near-surface elemental compositions and the derived electronic properties of the absorber material is discussed. It is found that the surface band gap energy crucially depends on the Cu-deficiency of the absorber surface and suggests that it is, in this region, only secondarily determined by the [Ga]/([In]+[Ga]) ratio.

引用

页数：6

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