Characterization of Shallow- and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements

被引：13

作者：

Takeuchi, Wakana ^{[1
]}

Asano, Takanori ^{[1
,2
]}

Inuzuka, Yuki ^{[1
]}

Sakashita, Mitsuo ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
,3
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Grad Sch Engn, Aichi 4648063, Japan

[2] Japan Soc Promot Sci, Chiyoda Ku, Tokyo 1020083, Japan

[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 04期

基金：

日本学术振兴会;

关键词：

IRRADIATION-INDUCED DEFECTS; LOW-TEMPERATURE GROWTH; GE CRYSTALS; ELECTRONIC-PROPERTIES; SI; GERMANIUM; VACANCY; DLTS; HYDROGEN; COMPLEX;

D O I：

10.1149/2.0151604jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Shallow-and deep-level defects in undoped Ge1-xSnx epitaxial layers on Ge and Si grown by molecular beam epitaxy and metal-organic chemical vapor deposition were investigated by Hall effect, capacitance-voltage, and deep-level transient spectroscopy (DLTS) measurements. We discuss the effects of postdeposition annealing and introducing hydrogen during crystal growth on shallow-level defects in undoped Ge1-xSnx epitaxial layers. Using DLTS measurements, we found shallow-(< E-V+0.05 eV) and deep-level (E-C-0.23 to E-C-0.33 eV) defects in undoped Ge1-xSnx grown on Ge. We conclude that one of the candidates for the shallow-level defect is related to dislocation in the epitaxial layers. (c) 2015 The Electrochemical Society. All rights reserved.

引用

页码：P3082 / P3086

页数：5

共 37 条

[31] EVALUATION OF INTERFACE STATES IN MOS STRUCTURES BY DLTS WITH A BIPOLAR RECTANGULAR WEIGHTING FUNCTION [J].

TOKUDA, Y ;

HAYASHI, M ;

USAMI, A .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (05) :895-898

[32] Experimental and theoretical study of the thermal solubility of the vacancy in germanium [J].

Vanhellemont, J. ;

Lauwaert, J. ;

Witecka, A. ;

Spiewak, P. ;

Romandic, I. ;

Clauws, P. .

PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) :4529-4532

[33] Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy [J].

Werner, J. ;

Oehme, M. ;

Schmid, M. ;

Kaschel, M. ;

Schirmer, A. ;

Kasper, E. ;

Schulze, J. .

APPLIED PHYSICS LETTERS, 2011, 98 (06)

[34]

Wirths S, 2015, NAT PHOTONICS, V9, P88, DOI [10.1038/nphoton.2014.321, 10.1038/NPHOTON.2014.321]

[35] Germanium Tin Tunneling Field-Effect Transistor for Sub-0.4 V Operation [J].

Yang, Yue ;

Low, Kain Lu ;

Guo, Pengfei ;

Wei, Wang ;

Han, Genquan ;

Yeo, Yee-Chia .

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09) :979-986

[36] Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition [J].

Yoshida, Teppei ;

Kato, Kimihiko ;

Shibayama, Shigehisa ;

Sakashita, Mitsuo ;

Taoka, Noriyuki ;

Takeuchi, Wakana ;

Nakatsuka, Osamu ;

Zaima, Shigeaki .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (08) :66-71

[37] Growth and applications of GeSn-related group-IV semiconductor materials [J].

Zaima, Shigeaki ;

Nakatsuka, Osamu ;

Taoka, Noriyuki ;

Kurosawa, Masashi ;

Takeuchi, Wakana ;

Sakashita, Mitsuo .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2015, 16 (04)

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