Characterization of Shallow- and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements

被引:13
作者
Takeuchi, Wakana [1 ]
Asano, Takanori [1 ,2 ]
Inuzuka, Yuki [1 ]
Sakashita, Mitsuo [1 ]
Nakatsuka, Osamu [1 ]
Zaima, Shigeaki [1 ,3 ]
机构
[1] Nagoya Univ, Dept Crystalline Mat Sci, Grad Sch Engn, Aichi 4648063, Japan
[2] Japan Soc Promot Sci, Chiyoda Ku, Tokyo 1020083, Japan
[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan
基金
日本学术振兴会;
关键词
IRRADIATION-INDUCED DEFECTS; LOW-TEMPERATURE GROWTH; GE CRYSTALS; ELECTRONIC-PROPERTIES; SI; GERMANIUM; VACANCY; DLTS; HYDROGEN; COMPLEX;
D O I
10.1149/2.0151604jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Shallow-and deep-level defects in undoped Ge1-xSnx epitaxial layers on Ge and Si grown by molecular beam epitaxy and metal-organic chemical vapor deposition were investigated by Hall effect, capacitance-voltage, and deep-level transient spectroscopy (DLTS) measurements. We discuss the effects of postdeposition annealing and introducing hydrogen during crystal growth on shallow-level defects in undoped Ge1-xSnx epitaxial layers. Using DLTS measurements, we found shallow-(< E-V+0.05 eV) and deep-level (E-C-0.23 to E-C-0.33 eV) defects in undoped Ge1-xSnx grown on Ge. We conclude that one of the candidates for the shallow-level defect is related to dislocation in the epitaxial layers. (c) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码:P3082 / P3086
页数:5
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