Characterization of Shallow- and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements

被引：13

作者：

Takeuchi, Wakana ^{[1
]}

Asano, Takanori ^{[1
,2
]}

Inuzuka, Yuki ^{[1
]}

Sakashita, Mitsuo ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
,3
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Grad Sch Engn, Aichi 4648063, Japan

[2] Japan Soc Promot Sci, Chiyoda Ku, Tokyo 1020083, Japan

[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2016年 / 5卷 / 04期

基金：

日本学术振兴会;

关键词：

IRRADIATION-INDUCED DEFECTS; LOW-TEMPERATURE GROWTH; GE CRYSTALS; ELECTRONIC-PROPERTIES; SI; GERMANIUM; VACANCY; DLTS; HYDROGEN; COMPLEX;

D O I：

10.1149/2.0151604jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Shallow-and deep-level defects in undoped Ge1-xSnx epitaxial layers on Ge and Si grown by molecular beam epitaxy and metal-organic chemical vapor deposition were investigated by Hall effect, capacitance-voltage, and deep-level transient spectroscopy (DLTS) measurements. We discuss the effects of postdeposition annealing and introducing hydrogen during crystal growth on shallow-level defects in undoped Ge1-xSnx epitaxial layers. Using DLTS measurements, we found shallow-(< E-V+0.05 eV) and deep-level (E-C-0.23 to E-C-0.33 eV) defects in undoped Ge1-xSnx grown on Ge. We conclude that one of the candidates for the shallow-level defect is related to dislocation in the epitaxial layers. (c) 2015 The Electrochemical Society. All rights reserved.

引用

页码：P3082 / P3086

页数：5

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