Diffusion of hydrogen in Lu at low temperatures

被引：4

作者：

Yamakawa, K

Maeta, H

机构：

[1] HIROSHIMA UNIV,FAC ENGN,HIGASHIHIROSHIMA 739,JAPAN

[2] JAPAN ATOM ENERGY RES INST,DEPT MAT SCI & ENGN,TOKAI,IBARAKI 31911,JAPAN

来源：

DEFECT AND DIFFUSION FORUM | 1997年 / 143卷

关键词：

hydrogen diffusion; lu; electrical resistivity; order-disorder; low temperature;

D O I：

10.4028/www.scientific.net/DDF.143-147.933

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diffusivity of hydrogen atoms in Lu is studied by electrical resistance measurements in the temperature range of 135-170K. Disordered hydrogen atoms, which are formed by quenching from 273.2K, migrate to order during annealing in the above temperature range. The rate of the resistance decrease during the annealing depends on the ordering rate of hydrogen. From the resistance decrease during isothermal annealings, the activation energy of hydrogen migration is determined as 0.430 +/- 0.006eV (41.5 +/- 0.5kJ/mol). This value is smaller than the literature value 0.574 +/- 0.015eV (55.4 +/- 1.4kJ/mol) obtained by Gorsky effect measurement at high temperatures. This result suggests that the hydrogen atoms in Lu migrate more easily at low temperatures due to tunneling effect.

引用

页码：933 / 938

页数：6

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