Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film

被引：23
作者：
Cheng, Xiaoyang [1 ]
Hong, Jianxun [1 ,2 ]
Spring, Andrew M. [1 ]
Yokoyama, Shiyoshi [1 ,3 ]
机构：
[1] Kyushu Univ, Dept Mol & Mat Sci, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
[2] Wuhan Univ Technol, Sch Informat Engn, Wuhan 430070, Peoples R China
[3] Kyushu Univ, Inst Mat Chem & Engn, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
来源：
OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 07期
关键词：
SILICON-NITRIDE; INTEGRATED PHOTONICS; LIGHT; GAS;
D O I：
10.1364/OME.7.002182
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality silicon nitride (Si3N4) films with a low stress and optical loss were deposited at low temperature (150 degrees C) using liquid source chemical vapor deposition (LSCVD). The refractive index of the Si3N4 film was optimized by changing the composition ratio and deposition temperature. An integrated photonic structure of micro-ring resonator based on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as a photonic integration platform. Bragg gratings are fabricated at both ends of the bus waveguide to improve coupling efficiency and testing flexibility. A measured waveguide loss of 2.9 dB/cm and a high Q-factor of 5.2 x 10(4) are achieved. The LSCVD deposited Si3N4 is therefore a highly promising photonic integration platform for various integrated photonic applications. (C) 2017 Optical Society of America
引用
收藏
页码：2182 / 2187
页数：6
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