Electrical properties of GaAs-Al0.46Ga0.54As superlattice within a wider quantum well

被引：1

作者：

Ajjel, R. ^{[1
]}

Maaref, H. ^{[1
]}

机构：

[1] Fac Sci, Dept Phys, Lab Phys Semicond & Composants Elect, Monastir 5019, Tunisia

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 11期

关键词：

electrical properties; GaAs-Al0.46Ga0.54As; superlattice; quantum well; tunneling effect;

D O I：

10.1016/j.mejo.2006.06.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on electrical studies preformed on GaAs-Al0.46Ga0.54As superlattice (SL) with a wider quantum well (QW) embedded in the middle of the structure. We perform capacitance-voltage (C-P) and deep-level transient spectroscopy (DLTS) measurements in order to show the QW electrical activity within determination of corresponding properties. Besides, we determine the effective generation lifetime depth profile for this structure by using capacitance- and reverse current-voltage measurements. Electrical field effect studies at room temperature lead us to propose that tunneling effect is responsible for electrons injection and emission into/from the active region of the studied structure. We believe that tunneling can affect the efficiency of the carrier collection into the active layer in this structure, which is of a considerable interest for the development of heterostructures lasers operating at room temperature. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1404 / 1407

页数：4

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