Phase change random access memory, thermal analysis

被引:0
|
作者
Sadeghipour, Sadegh M. [1 ]
Pileggi, Larry [2 ]
Asheghi, Mehdi [1 ]
机构
[1] Carnegie Mellon Univ, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
来源
2006 PROCEEDINGS 10TH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONICS SYSTEMS, VOLS 1 AND 2 | 2006年
关键词
OUM; PCRAM; nonvolatile memory; Ovonic Unified Memory; I-structure; thermal analysis; line memory;
D O I
暂无
中图分类号
O414.1 [热力学];
学科分类号
摘要
Despite very encouraging progress in recent years, phase change random access memory (Ovonic Unified Memory, OUM) still faces several problems, such as reliability (lifetime), power consumption and speed, which need to be resolved before it can be commercialized. There have been a number of attempts to address such problems, even through devising other alternatives such as line memory and thermal GST memory cells. However, a comprehensive thermal engineering of the OUM memory cell is missing from the literature, and yet can have a great impact on design and optimization of the device. Such an analysis can definitely serve the OUM technology to achieve the optimum design and can even be used as a guideline for defining the research path. This manuscript provides an insight into the thermal issues and phenomena in the phase change random access memory cell. I-structure is proposed for OUM which has the combined features of T-structure and the line memory cell.
引用
收藏
页码:660 / +
页数:2
相关论文
共 50 条
  • [31] Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
    Jun-seop An
    Chul-min Choi
    Satoshi Shindo
    Yuji Sutou
    Yong-woo Kwon
    Yun-heub Song
    Journal of Computational Electronics, 2016, 15 : 1570 - 1576
  • [32] Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
    An, Jun-seop
    Choi, Chul-min
    Shindo, Satoshi
    Sutou, Yuji
    Kwon, Yong-woo
    Song, Yun-heub
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2016, 15 (04) : 1570 - 1576
  • [33] Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory
    Yang Hongxin
    Shi Luping
    Koon, Lee Hock
    Zhao Rong
    Chong, Chong Tow
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
  • [34] Disturbance Characteristics of Vertical Channel Phase Change Random Access Memory Array
    Kim, Kyung Soo
    Cho, Il Hwan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (08)
  • [35] Cell simulation system for a new type of phase change random access memory
    Hu, Zuoqi
    Li, Lan
    Yuan, Chengwei
    Huazhong Keji Daxue Xuebao (Ziran Kexue Ban)/Journal of Huazhong University of Science and Technology (Natural Science Edition), 2009, 37 (07): : 50 - 53
  • [36] Electrical and structural properties of TaSiN electrode for phase change random access memory
    Jung, Kyo-Min
    Jung, Min-Sang
    Kim, Young-Bae
    Choi, Duck-Kyun
    THIN SOLID FILMS, 2009, 517 (14) : 3837 - 3840
  • [37] Investigations on non volatile and non rotational phase change random access memory
    Shi, LP
    Chong, TC
    Zhao, R
    Li, JM
    Tan, PK
    Miao, XS
    Wang, WJ
    Lee, HK
    Wei, XQ
    Yang, HX
    Lim, KG
    Song, WD
    2005 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS, 2005, : 115 - 120
  • [38] Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory
    Lee, Bong-Sub
    Darmawikarta, Kristof
    Raoux, Simone
    Shih, Yen-Hao
    Zhu, Yu
    Bishop, Stephen G.
    Abelson, John R.
    APPLIED PHYSICS LETTERS, 2014, 104 (07)
  • [39] Scaling of Data Retention Statistics in Phase-Change Random Access Memory
    Kwon, Yongwoo
    Park, Byoungnam
    Kang, Dae-Hwan
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) : 454 - 456
  • [40] Reversible switching in bicontinuous structure for phase change random access memory application
    Cheng, Yan
    Zheng, Yonghui
    Song, Zhitang
    NANOSCALE, 2021, 13 (08) : 4678 - 4684