Quantum well thermoelectric devices

Fabrication development of high efficiency quantum well (QW) thermoelectric continues with the P-type B4C/B9C and N-type Si/SiGe films. Si/SiC is being developed to replace Si/SiGe for higher temperature operation. Both isothermal and gradient life testing are underway. One couple has achieved 700 hours at T-H of 300 degrees C and T-C of 50 degrees C with no degradation. Emphasis is now shifting towards couple and module design and fabrication. Preliminary design calculations regarding the development of actual quantum well modules will be presented for both power prediction and cooling applications. These modules can be used in future energy conversion system as well as air conditioning system designs.