Light emission in Si avalanches

被引:42
作者
Mirzoyan, R. [1 ]
Kosyra, R. [1 ]
Moser, H. -G. [1 ,2 ,3 ]
机构
[1] Werner Heisenberg Inst, Max Planck Inst Phys, Munich, Germany
[2] MPI Phys, Semicond Lab, Munich, Germany
[3] MPI Extraterr Phys, Munich, Germany
关键词
SiPM; MPPC; GAPD; Micro-channel APD; Cross-talk; Si avalanche; Light sensors; Low light level sensors; Light emission from Si; IMPACT IONIZATION; SILICON; PHOTODIODES; PHOTONS;
D O I
10.1016/j.nima.2009.05.081
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
For about half a century, light emission observed in Si avalanches has been a well-known process. In numerous measurements the researchers measured its intensity and spectrum shape, but unfortunately still there are non-negligible differences between measurements. Recently the interest in this effect has been revived because of the SiPM (GAPD, MPPC, micro-channel APD). One of the main drawbacks of SiPM is due to the light emission in avalanches that causes a cross-talk between neighbour cells. In many applications this can strongly degrade the performance of SiPM. We measured the light emitted by a 1 mm x 1 mm Hamamatsu MPPC that was coupled to a spectrograph. We report here our measurements of the differential light emission in the wavelength range 450-1600 nm. The measurements were made using CCDs sensitive to visible and near-infrared light. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:98 / 100
页数:3
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