High peak power passively Q-switched 2 μm solid-state laser based on a MoS2 saturated absorber

被引：12

作者：

Gao, Tianwen ^{[1
]}

Zhang, Rui ^{[1
]}

Shi, Zechang ^{[1
]}

Jiang, Ziyin ^{[1
]}

Guo, Ao ^{[1
]}

Qiao, Tianxu ^{[2
]}

He, Chenxi ^{[2
]}

Wang, Guoshui ^{[2
]}

Yang, Xiaotao ^{[2
]}

Cui, Jinhui ^{[1
]}

机构：

[1] Harbin Engn Univ, Coll Phys & Optoelect Engn, Harbin 150001, Peoples R China

[2] Harbin Engn Univ, Coll Power & Energy Engn, Harbin, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2021年 / 63卷 / 07期

基金：

中国国家自然科学基金;

关键词：

2 μ m laser; MoS2; passively Q‐ switched; tm; YAP crystal; OPERATION;

D O I：

10.1002/mop.32856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2 mu m passively Q-switched Tm:YAP solid-state laser with MoS2 as saturated absorber was demonstrated in this work. MoS2 two-dimensional materials were prepared by using the method of chemical vapor deposition. The laser achieved high peak power of 21.2 W and high single pulse energy of 19.5 mu J, while maintaining a short pulse width of 916 ns. This is the first time that the peak power of a Tm:TAP solid-state laser based on a MoS2 saturated absorber has reached 21.2 W. The beam quality factor was M-x(2) = 1.08 and M-y(2) = 1.10.

引用

页码：1990 / 1994

页数：5

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