A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers

被引：0
|
作者：
Shi, Bo [1 ]
Chia, Michael Yan Wah [1 ]
机构：
[1] Inst Infocomm Res, 20 Sci Pk Rd 02-21-25,TeleTech Pk,Singaporte Sci, Singapore 117674, Singapore
来源：
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2006年
关键词：
RF integrated circuit; low-noise amplifier; ultra-wideband (UWB); SiGe; wideband amplifier; feedback amplifier;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UVVB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input match. Fabricated in a 0.25 mu SiGe. BiCMOS technology, the IC prototype delivers a flat power gain of nominal 20 dB and a noise figure of 2.8-4.7 dB over the entire UWB frequency band, while achieving an input IP3 of -8 dBm. The amplifier occupies only 0.34 mm(2) chip area and consumes 11 mA from a 2.7 V supply.
引用
收藏
页码：57 / 60
页数：4
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