Dielectric Properties of GaN in THz Frequencies

被引：4

作者：

Fang He-Nan ^{[1
,2
]}

Zhang Rong ^{[1
,2
]}

Liu Bin ^{[1
,2
]}

Lu Hai ^{[1
,2
]}

Ding Jian-Ping ^{[1
,2
]}

Xie Zi-Li ^{[1
,2
]}

Xiu Xiang-Qian ^{[1
,2
]}

Zheng You-Dou ^{[1
,2
]}

Xiao Ming-Wen ^{[2
]}

Zhang Cai-Hong ^{[3
]}

Chen Jian ^{[3
]}

Wu Pei-Heng ^{[3
]}

机构：

[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Elect Sci & Engn, Nanjing 210093, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 01期

关键词：

TIME-DOMAIN SPECTROSCOPY; THIN-FILMS; TERAHERTZ;

D O I：

10.1088/0256-307X/27/1/017802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The complex refractive indices and the dielectric function of GaN for frequencies ranging from 0.25 to 1.22 THz are obtained using THz time-domain spectroscopy. The real part of the dielectric function first decreases from 0.25 to 0.42 THz and then oscillates from 0.42 to 1.22 THz, whereas the imaginary part of the dielectric function is oscillating within the whole range of frequency. The simple Drude model is extended to take into account the effect of defects on the dielectric function. The extended model is in agreement with the experimental data.

引用

页数：4

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