Improved carrier injection in ultrathin-body SOI Schottky-barrier MOSFETs

被引：35
作者：
Zhang, M. [1 ]
Knoch, J.
Appenzeller, Joerg
Mantl, S.
机构：
[1] IBN1 IT, Inst Bio & Nanosyst, D-52454 Julich, Germany
[2] Forschungszentrum Juliche, Ctr Nanoelect Syst Informat Technol, D-52454 Julich, Germany
[3] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 03期
关键词：
carrier injection; Schottky-barrier (SB)-MOSFET; ultrathin-body silicon-on-insulator (SOI);
D O I：
10.1109/LED.2007.891258
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the Sills. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained.
引用
收藏
页码：223 / 225
页数：3
相关论文
共 11 条
  • [1] Appenzeller J, 2000, ELECTROCHEM SOLID ST, V3, P84, DOI 10.1149/1.1390965
  • [2] Celler G. K., 1999, P IEEE INT C SOI, P114
  • [3] Measurement of low Schottky barrier heights applied to metallic source/drain metal-oxide-semiconductor field effect transistors
    Dubois, E
    Larrieu, G
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) : 729 - 737
  • [4] High-speed Schottky-barrier pMOSFET with fT=280 GHz
    Fritze, M
    Chen, CL
    Calawa, S
    Yost, D
    Wheeter, B
    Wyatt, P
    Keast, CL
    Snyder, J
    Larson, J
    [J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) : 220 - 222
  • [5] A computational study of thin-body, double-gate, Schottky barrier MOSFETs
    Guo, J
    Lundstrom, MS
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (11) : 1897 - 1902
  • [6] Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors
    Heinze, S
    Radosavljevic, M
    Tersoff, J
    Avouris, P
    [J]. PHYSICAL REVIEW B, 2003, 68 (23)
  • [7] Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime
    Kedzierski, J
    Xuan, PQ
    Anderson, EH
    Bokor, J
    King, TJ
    Hu, CM
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 57 - 60
  • [8] Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors
    Knoch, J
    Appenzeller, J
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (16) : 3082 - 3084
  • [9] On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs
    Knoch, Joachim
    Zhang, Min
    Mantl, Siegfried
    Appenzeller, J.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (07) : 1669 - 1674
  • [10] High-performance carbon nanotube field-effect transistor with tunable Polarities
    Lin, YM
    Appenzeller, J
    Knoch, J
    Avouris, P
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (05) : 481 - 489
12