Improved carrier injection in ultrathin-body SOI Schottky-barrier MOSFETs

被引：35
作者：
Zhang, M. [1 ]
Knoch, J.
Appenzeller, Joerg
Mantl, S.
机构：
[1] IBN1 IT, Inst Bio & Nanosyst, D-52454 Julich, Germany
[2] Forschungszentrum Juliche, Ctr Nanoelect Syst Informat Technol, D-52454 Julich, Germany
[3] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 03期
关键词：
carrier injection; Schottky-barrier (SB)-MOSFET; ultrathin-body silicon-on-insulator (SOI);
D O I：
10.1109/LED.2007.891258
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the Sills. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained.
引用
收藏
页码：223 / 225
页数：3
相关论文
共 11 条
[1]  
Appenzeller J, 2000, ELECTROCHEM SOLID ST, V3, P84, DOI 10.1149/1.1390965
[2]  
Celler G. K., 1999, P IEEE INT C SOI, P114
[3]   Measurement of low Schottky barrier heights applied to metallic source/drain metal-oxide-semiconductor field effect transistors [J].
Dubois, E ;
Larrieu, G .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :729-737
[4]   High-speed Schottky-barrier pMOSFET with fT=280 GHz [J].
Fritze, M ;
Chen, CL ;
Calawa, S ;
Yost, D ;
Wheeter, B ;
Wyatt, P ;
Keast, CL ;
Snyder, J ;
Larson, J .
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) :220-222
[5]   A computational study of thin-body, double-gate, Schottky barrier MOSFETs [J].
Guo, J ;
Lundstrom, MS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (11) :1897-1902
[6]   Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors [J].
Heinze, S ;
Radosavljevic, M ;
Tersoff, J ;
Avouris, P .
PHYSICAL REVIEW B, 2003, 68 (23)
[7]   Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime [J].
Kedzierski, J ;
Xuan, PQ ;
Anderson, EH ;
Bokor, J ;
King, TJ ;
Hu, CM .
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :57-60
[8]   Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors [J].
Knoch, J ;
Appenzeller, J .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :3082-3084
[9]   On the performance of single-gated ultrathin-body SOI Schottky-barrier MOSFETs [J].
Knoch, Joachim ;
Zhang, Min ;
Mantl, Siegfried ;
Appenzeller, J. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (07) :1669-1674
[10]   High-performance carbon nanotube field-effect transistor with tunable Polarities [J].
Lin, YM ;
Appenzeller, J ;
Knoch, J ;
Avouris, P .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2005, 4 (05) :481-489
12