Electrical properties of zinc oxide - Tetracene heterostructures with different n-type ZnO films

被引：6
作者：
Luka, G. [1 ]
Nittler, L. [1 ]
Lusakowska, E. [1 ]
Smertenko, P. [2 ]
机构：
[1] Polish Acad Sci, Inst Phys, Warsaw, Poland
[2] Natl Acad Sci Ukraine, V Lashkonyov Inst Semicond Phys, Kiev, Ukraine
来源：
ORGANIC ELECTRONICS | 2017年 / 45卷
关键词：
Zinc oxide; Hybrid heterojunction; Atomic layer deposition; Electrical properties; CHARGE-LIMITED CURRENTS; GROWTH; TRANSISTORS; DEPOSITION; MORPHOLOGY; INTERFACE; INJECTION; EMISSION; LAYER;
D O I：
10.1016/j.orgel.2017.03.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical properties of organic-inorganic p-n heterojunction structures with tetracene (Tc) and zinc oxide (ZnO) films were investigated. The ZnO films had different n-type carrier concentrations that varied from similar to 10(15) cm(-3) to 10(19) cm(-3). Lower n-type ZnO layers resulted in decreased reverse currents in the ZnO:Al/ZnO/Tc/Au structures and in an improvement of their asymmetric properties. Experimentally determined energy level alignments at the ZnO/Tc interfaces were related to the electrical behavior of the structures. An improved rectification was associated with decreased generation-recombination currents at the ZnO/Tc interface due to an increased organic-inorganic interface energy gap. Current-voltage characteristics were analyzed by a differential approach. Electrical conduction mechanisms including bimolecular recombination as well as trap-filled limited conduction were identified in the investigated structures. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：240 / 246
页数：7
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