Photothermoelectric Effects in Nanoporous Silicon

被引：39

作者：

Lai, Yu-Sheng ^{[1
]}

Tsai, Chao-Yang ^{[2
]}

Chang, Chin-Kai ^{[2
]}

Huang, Cheng-Yin ^{[2
]}

Hsiao, Vincent K. S. ^{[2
]}

Su, Yuhlong Oliver ^{[3
]}

机构：

[1] Natl Appl Res Labs, Natl Nano Device Labs, 26,Prosper Rd 1, Hsinchu 30078, Taiwan

[2] Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, 1 Univ Rd, Puli 54561, Nantou, Taiwan

[3] Natl Chi Nan Univ, Dept Appl Chem, 1 Univ Rd, Puli 54561, Nantou, Taiwan

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 13期

关键词：

BROAD-BAND; GRAPHENE; PHOTODETECTOR; FILMS;

D O I：

10.1002/adma.201504990

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photo-current is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.

引用

页码：2644 / +

页数：6

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