Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology

被引：6
|
作者：
Madan, Anuj [1 ]
Phillips, Stanley D. [1 ]
Cressler, John D. [1 ]
Marshall, Paul W. [2 ]
Liang, Qingqing [3 ]
Freeman, Greg [3 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
[2] NASA, GSFC, Brookneal, VA 24528 USA
[3] IBM Corp, Microelect Div, Fishkill, NY 12533 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2009年 / 56卷 / 04期
关键词：
CMOS; proton radiation; RF technology; SOI; total dose; TRANSISTOR RESPONSE; BIAS;
D O I：
10.1109/TNS.2009.2014064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of 63 MeV proton irradiation on 65 nm Silicon-On- Insulator (SOI) CMOS technology are presented for the first time. The radiation response of the CMOS devices was investigated up to an equivalent total gamma dose of 4.1 Mrad (SiO2). We analyze the implications of proton irradiation on RF performance of these devices. The cut-off frequency is degraded due to post-irradiation degradation of device transconductance. High-frequency measurements show that the input and output matching conditions are not affected, up to a cumulative dose of 4.1 Mrad. The implications of proton irradiation on device design constraints, particularly device width and number of gate fingers, are discussed in the context of high performance RF CMOS technology. These results suggest that multi-finger CMOS devices with higher finger width are better-suited for the development of total-dose radiation tolerant analog and RF circuits without additional radiation hardening.
引用
收藏
页码：1914 / 1919
页数：6
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