Atomic and mesoscopic scale characterization of semiconductor interfaces by ballistic electron emission microscopy

被引：11
作者：
Lee, EY
Bhargava, S
Chin, MA
Narayanamurti, V
机构：
[1] Electrical and Computer Engineering Department, University of California, Santa Barbara
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1997年 / 15卷 / 03期
关键词：
D O I：
10.1116/1.580588
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ballistic electron emission microscopy (BEEM) is a powerful new low energy electron microscopy in materials physics for nondestructive local electronic characterization of semiconductor heterostructures. In this article, low energy electron imaging of buried semiconductor heterostructures will be explored, with particular emphasis on BEEM imaging of buried objects in metal-GaAs based heterostructures. (C) 1997 American Vacuum Society.
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收藏
页码：1351 / 1357
页数：7
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