Photoemission characteristics of graded band-gap AlGaAs/GaAs wire photocathode

被引：32

作者：

Ding, Xiaojun ^{[1
]}

Ge, Xiaowan ^{[1
]}

Zou, Jijun ^{[1
]}

Zhang, Yijun ^{[2
]}

Peng, Xincun ^{[1
]}

Deng, Wenjuan ^{[1
]}

Chen, Zhaoping ^{[1
]}

Zhao, Wenjun ^{[1
]}

Chang, Benkang ^{[2
]}

机构：

[1] East China Univ Technol, Engn Res Ctr New Energy Technol Jiangxi Prov, Nanchang 330013, Peoples R China

[2] Nanjing Univ Sci & Technol, Sch Elect & Opt Engn, Nanjing 210094, Jiangsu, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2016年 / 367卷

基金：

中国国家自然科学基金;

关键词：

Graded band-gap; Photoemission; Wire photocathode; Integral sensitivity; OPTICAL-PROPERTIES; GAAS PHOTOCATHODE; ELECTRON; POLARIZATION;

D O I：

10.1016/j.optcom.2016.01.031

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A photoemission model of graded band-gap AlGaAs/GaAs wire NEA photocathode is developed based on the numerical solution of coupled Poisson and continuity equations. The emission current density and integral sensitivity of graded band-gap AlGaAs/GaAs wire photocathode as a function of incident light wavelength, Al composition range, and wire length, are simulated according to the model. The simulation results show that, compared with the GaAs (Al composition 0) wire photocathode, the peak integral sensitivities for the photocathodes with wire width of 1 mu m and linearly graded Al composition ranges of 0 to 0.1, 0.2, 0.3, and 0.4 increase by 29.5%, 38.5%, 42.1%, and 43.8%, respectively. The optimum wire lengths are 4.7, 5.9, 7.1, and 8.4 mu m for the wire photocathodes with Al composition ranges of 0 to 0.1, 0.2, 0.3, and 0.4, respectively. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：149 / 154

页数：6