Pinning and switching of magnetic moments in bilayer graphene

被引：19
作者：
Castro, Eduardo V. [1 ,2 ]
Lopez-Sancho, M. P. [1 ]
Vozmediano, M. A. H. [1 ]
机构：
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[2] Ctr Fis Porto, P-4169007 Oporto, Portugal
来源：
NEW JOURNAL OF PHYSICS | 2009年 / 11卷
关键词：
BAND-STRUCTURE; GRAPHITE; STATE;
D O I：
10.1088/1367-2630/11/9/095017
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree-Fock calculation. We show that, with realistic values of the parameters and for experimentally accessible gate voltages, we can have magnetic switching between an unpolarized and a fully polarized system.
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页数：9
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