Pinning and switching of magnetic moments in bilayer graphene

被引：19

作者：

Castro, Eduardo V. ^{[1
,2
]}

Lopez-Sancho, M. P. ^{[1
]}

Vozmediano, M. A. H. ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Ctr Fis Porto, P-4169007 Oporto, Portugal

来源：

NEW JOURNAL OF PHYSICS | 2009年 / 11卷

关键词：

BAND-STRUCTURE; GRAPHITE; STATE;

D O I：

10.1088/1367-2630/11/9/095017

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We examine the magnetic properties of the localized states induced by lattice vacancies in bilayer graphene with an unrestricted Hartree-Fock calculation. We show that, with realistic values of the parameters and for experimentally accessible gate voltages, we can have magnetic switching between an unpolarized and a fully polarized system.

引用

页数：9

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