Novel Radiation-Hardened-by-Design (RHBD) 12T Memory Cell for Aerospace Applications in Nanoscale CMOS Technology

被引：65

作者：

Guo, Jing ^{[1
,2
]}

Zhu, Lei ^{[3
]}

Liu, Wenyi ^{[1
,2
]}

Huang, Hai ^{[4
,5
]}

Liu, Shanshan ^{[6
]}

Wang, Tianqi ^{[6
]}

Xiao, Liyi ^{[6
]}

Mao, Zhigang ^{[6
,7
]}

机构：

[1] North Univ China, Minist Educ, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Peoples R China

[2] North Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Peoples R China

[3] Qiqihar Univ, Commun & Elect Engn Inst, Qiqihar 161006, Peoples R China

[4] Harbin Univ Sci & Technol, Sch Software, Harbin 150001, Peoples R China

[5] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

[6] Harbin Inst Technol, Microelect Ctr, Harbin 150001, Peoples R China

[7] Shanghai Jiao Tong Univ, Sch Microelect, Shanghai 200240, Peoples R China

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2017年 / 25卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Memory; multiple-node upset; radiation-hardened-by-design (RHBD); soft errors; HIGH-PERFORMANCE; SRAM CELLS; ERROR; UPSETS; SCHEMES;

D O I：

10.1109/TVLSI.2016.2645282

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, a novel radiation-hardened-by-design (RHBD) 12T memory cell is proposed to tolerate single node upset and multiple-node upset based on upset physical mechanism behind soft errors together with reasonable layout-topology. The verification results obtained confirm that the proposed 12T cell can provide a good radiation robustness. Compared with 13T cell, the increased area, power, read/write access time overheads of the proposed 12T cell are -18.9%, -23.8%, and 171.6%/-50.0%, respectively. Moreover, its hold static noise margin is 986.2 mV which is higher than that of 13T cell. This means that the proposed 12T cell also has higher stability when it provides fault tolerance capability.

引用

页码：1593 / 1600

页数：8

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