Fabrication and structural analysis of Al, Ga, and In nanocluster crystals

被引:102
作者
Jia, JF
Liu, X
Wang, JZ
Li, JL
Wang, XS
Xue, QK
Li, ZQ
Zhang, ZY
Zhang, SB
机构
[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
[2] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
[3] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
[4] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1103/PhysRevB.66.165412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Artificial nanocluster crystals of In, Ga, and Al were fabricated using a technique in which surface mediated magic clustering is used to achieve identical cluster size while the Si(111)-7x7 surface is used as a template for ordering the clusters. The atomic structures, formation mechanism and stability of the nanoclusters were studied with in situ scanning tunneling microscopy combined with first-principles total energy calculations. Our study shows that delicate control of growth kinetics is extremely important for cluster crystal fabrication, and there is essentially no limitation to this method. The high thermal stability and unique structure make these artificial nanocluster crystals promising for various applications.
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收藏
页码:1 / 10
页数:10
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