Integrated Thin-Film Radiation Detectors and In-Pixel Amplification

被引：14

作者：

Avila-Avendano, Carlos ^{[1
]}

Mejia, Israel ^{[1
]}

Garcia-Lozano, Rodolfo ^{[2
]}

Reyes, Luis E. ^{[1
]}

Rozhdestvenskyy, Sergiy ^{[1
]}

Pham, Christopher ^{[1
]}

Pradhan, Bhabendra ^{[3
]}

Gnade, Bruce E. ^{[4
]}

Quevedo-Lopez, Manuel A. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

[2] Univ Autonoma Estado Mexico, Ctr Univ Ecatepec, Ecatepec De Morelos 55020, Mexico

[3] Nanoholdings LLC, Rowayton, CT 06853 USA

[4] Southern Methodist Univ, Lyle Sch Engn, Dallas, TX 75205 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 09期

关键词：

Charged particle detectors; neutron detectors; polysilicon; thin-film detectors; thin-film transistor (TFT); NEUTRON DETECTORS; INGAZNO TFTS; DESIGN; PERFORMANCE; TRANSISTORS; EFFICIENCIES; CHARGE; MODEL; GAIN; CDS;

D O I：

10.1109/TED.2018.2859778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose the use of polysilicon thin-film circuits to develop charged particle and neutron detection systems. We detail the methodology to design, fabricate, and implement polysilicon preamplifiers with the requirements for radiation detectors. We demonstrate the combination of polysilicon electronics with Si photodiodes to resolve the spectral response of a Po-210 alpha source and demonstrate for the first time neutron detection capabilities. Also, we present the first implementation of a full thin-film radiation detection system using CdS/CdTe detectors and a polysilicon thin-film transistor for single-event charged particle detection.

引用

页码：3809 / 3815

页数：7

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