Structure and photoluminescence of wurtzite/zinc-blende heterostructure GaN nanorods

被引：26

作者：

Xu, H. Y. ^{[1
]}

Liu, Z. ^{[1
]}

Liang, Y. ^{[1
]}

Rao, Y. Y. ^{[1
]}

Zhang, X. T. ^{[1
]}

Hark, S. K. ^{[1
]}

机构：

[1] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 13期

关键词：

GALLIUM NITRIDE NANOWIRES; CHEMICAL-VAPOR-DEPOSITION; CATALYTIC GROWTH; STACKING-FAULTS; QUANTUM-WELLS; NANOTUBES; ALIGNMENT;

D O I：

10.1063/1.3240890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN nanorods with a wurtzite/zinc-blende (WZ/ZB) heterostructure are synthesized by chemical vapor deposition. They have a triangular cross section and grow along the WZ[01 (1) over bar0] direction. The WZ and ZB phases appear alternately along the nanorod's transverse direction, forming a type-II superlattice structure. Two ultraviolet emission peaks dominate the photoluminescence spectra of the GaN nanorods. One originates from excitonic transitions within the WZ regions. The other shows an anomalous "S-shaped"energy shift with increasing temperature, and is attributed to radiative recombinations of carriers localized at potential fluctuations in ZB regions. The carrier localization also results in high luminescent efficiency of the GaN nanorods. (C) 2009 American Institute of Physics. [doi:10.1063/1.3240890]

引用

页数：3

共 45 条

[11] Hydrothermal Synthesis of Zinc Blende Phases in Wurtzite ZnO Phases and Their Temperature-Dependent Photoluminescence [J].

Lv, Jianguo ;

Wang, Feng ;

Zhou, Zhitao ;

Liu, Changlong ;

Gong, Wanbing ;

Feng, Yuan ;

Chen, Xiaoshuang ;

Tang, Yongqiang ;

He, Gang ;

Shi, Shiwei ;

Jiang, Xishun ;

Song, Xueping ;

Sun, Zhaoqi ;

Cui, Jingbiao .

SCIENCE OF ADVANCED MATERIALS, 2013, 5 (06) :617-622

[12] Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser [J].

Fan, WJ ;

Li, MF ;

Chong, TC ;

Xia, JB .

SOLID STATE COMMUNICATIONS, 1996, 98 (08) :737-740

[13] Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure [J].

Duque, C. M. ;

Morales, A. L. ;

Mora-Ramos, M. E. ;

Duque, C. A. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (04) :670-677

[14] First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors [J].

Gmitra, Martin ;

Fabian, Jaroslav .

PHYSICAL REVIEW B, 2016, 94 (16)

[15] Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband k • p method [J].

Campos, Tiago ;

Faria Junior, Paulo E. ;

Gmitra, Martin ;

Sipahi, Guilherme M. ;

Fabian, Jaroslav .

PHYSICAL REVIEW B, 2018, 97 (24)

[16] Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells [J].

Lepkowski, SP ;

Majewski, JA .

SOLID STATE COMMUNICATIONS, 2004, 131 (12) :763-767

[17] Metastable cubic zinc-blende III/V semiconductors: Growth and structural characteristics [J].

Beyer, Andreas ;

Stolz, Wolfgang ;

Volz, Kerstin .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2015, 61 (2-4) :46-62

[18] Unambiguous identification of recombination lines in single zinc-blende ZnSe nanowires in direct relation to their microstructure [J].

Saxena, Ankur ;

Pan, Qi ;

Ruda, Harry E. .

NANOTECHNOLOGY, 2013, 24 (10)

[19] Piezoelectric constant temperature dependence in strained [111]-oriented zinc-blende MQW-SOAs [J].

Soto-Ortiz, Horacio ;

Torres-Miranda, Gerson .

CHINESE OPTICS LETTERS, 2023, 21 (09)

[20] Valence band offsets at zinc-blende heterointerfaces with misfit dislocations: A first-principles study [J].

Hinuma, Yoyo ;

Oba, Fumiyasu ;

Tanaka, Isao .

PHYSICAL REVIEW B, 2013, 88 (07)

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