Morphology and Structure of Self-Assembled InxGa1-xAs Quantum Dots Grown on GaAs (100) Using MOCVD

被引：0

作者：

Othaman, Zulkafli ^{[1
]}

Aryanto, Didik ^{[1
]}

Ismail, Abd. Khamim ^{[1
]}

机构：

[1] UTM, Dept Phys, Fac Sci, Skudai 81310, Johor, Malaysia

来源：

NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 1136卷

关键词：

Quantum Dots; In(x)Ga(1-x)As; MOCVD; AFM; HR-XRD; MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; INAS; SURFACE; STRAIN; THICKNESS; 1.3-MU-M; LAYERS;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Stacked In(x)Ga(1-x)As quantum dots (QDs) were grown by metal-organic chemical vapor deposition (MOCVD) via Stranski-Krastanov growth mode. AFM images show that the QDs structures were formed and the stacked structure of In(x)Ga(1-x)As QDs were confirmed by the HRXRD analysis. Composition of the dots on the top most layers was related to the number of stack layers. The observed PL peak position was blue-shifted due to different number of stacked QDs. The PL intensity also dramatically increase, which shows the possibility of the QDs application in optical devices at room temperature.

引用

页码：36 / 40

页数：5

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