Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates

被引：28

作者：

Choi, Suk ^{[1
,2
]}

Kim, Hee Jin ^{[1
,2
]}

Zhang, Yun ^{[1
,2
]}

Bai, Xiaogang ^{[3
]}

Yoo, Dongwon ^{[1
,2
]}

Limb, Jae ^{[1
,2
]}

Ryou, Jae-Hyun ^{[1
,2
]}

Shen, Shyh-Chiang ^{[1
,2
]}

Yoder, P. D. ^{[4
]}

Dupuis, Russell D. ^{[1
,2
]}

机构：

[1] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[4] Georgia Inst Technol, Sch Elect & Comp Engn, Savannah, GA 31407 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 20期

关键词：

Avalanche photodiode (APD); epitaxial growth; gallium nitride; Geiger mode;

D O I：

10.1109/LPT.2009.2029073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultraviolet (UV) GaN p-i-n avalanche photodiodes (APDs) on low dislocation density free-standing GaN substrates were grown and fabricated. The GaN APD showed a stable avalanche multiplication gain in a linear mode, using UV illumination. In Geiger-mode operation at room temperature with gated quenching, no after-pulsing effect was observed up to 100 kHz. The single-photon detection efficiency and dark-count probability were measured to be similar to 1% and similar to 3 x 10(-2) at 265 nm, respectively.

引用

页码：1526 / 1528

页数：3

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