Electron tunneling rate in quantum dots under a uniform electric field

被引:74
作者
Kuo, DMT
Chang, YC
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1103/PhysRevB.61.11051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A stabilization method is used to evaluate the tunneling rate of an electron in isolated quantum dots of conical shape under uniform electric field. A stabilization graph is obtained by plotting the eigenvalues of a single quantum dot embedded in a confining box made of barrier material as functions of the size of the box. The eigenvalues of the system are calculated within the effective mass approximation via the Raleigh-Ritz variational method. The density of states associated with the quasibound state is constructed from the stabilization graph and is shown to have a Lorentzian profile. The width of the Lorentzian profile gives the tunneling rate. We show that the tunneling rate of the quantum dot system is 2-3 times smaller than that of a quantum well system with the same bound-to-continuum transition energy.
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页码:11051 / 11056
页数:6
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