Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition

被引：173
作者：
Yao, J. D. [1 ]
Zheng, Z. Q. [1 ]
Yang, G. W. [1 ]
机构：
[1] Sun Yat Sen Univ, Sch Mat Sci & Engn, Nanotechnol Res Ctr, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
来源：
PROGRESS IN MATERIALS SCIENCE | 2019年 / 106卷
基金：
中国国家自然科学基金;
关键词：
2D layered materials; Pulsed-laser deposition; Large-area; Photodetectors; HEXAGONAL-BORON-NITRIDE; FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER MOS2; BROAD-BAND PHOTORESPONSE; TRANSITION-METAL DICHALCOGENIDE; TOPOLOGICAL INSULATOR BI2TE3; DER-WAALS HETEROJUNCTIONS; MOLECULAR-BEAM EPITAXY; DOPED FIBER LASER;
D O I：
10.1016/j.pmatsci.2019.100573
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Our review provides a comprehensive overview on the latest progress in pulsed-laser deposition (PLD) of 2D layered materials (2DLMs), and its application in photoelectric detection. We begin with a retrospective overview on various 2DLMs and their development in photoelectric detection. Then we present the fundamentals of PLD and its unique advantages compared with the traditional growth methods. Subsequently, the PLD growth of 2DLMs and the influence of various parameters are discussed. After this, we describe the current metal-semiconductor-metal and vertical heterojunction photodetectors that incorporate the PLD-grown 2DLMs. This leads into a summary of the strategies used to improve the photosensitivity and in-depth insights into the working mechanism. We then present the PLD-fabricated transparent and flexible 2DLM photodetectors. Finally, we highlight the unresolved issues and propose the future directions in this emerging research field.
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页数：64
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